Magnetoresistive sensors

Magnetoresistance is the tendency of a material (often ferromagnetic) to change the value of its electrical resistance in an externally-applied magnetic ...

The effect is observed as a significant change in the electrical resistance depending on whether the magnetization of adjacent ferromagnetic layers are in a ...

由 T Miyazaki 著作 · 2012 · 被引用 1 次 — The history of the research on magnetoresistance effect is described first and then the basis of electron conduction is explained.

由 R Zhu 著作 · 2022 — The anisotropic magnetoresistance (AMR) effect is an important physical effect first discovered by Thomson, (1) which refers to the phenomenon ...

A magnetoresistive sensor uses the fact that the electrical resistance in a ferromagnetic thin film alloy is changed through an external magnetic field. “Ferrum ...

2021年9月27日 — An external magnetic field stresses the magnetic domains in NiFe and reduces the resistance of the material. When the field is removed, the ...

Magnetoresistance effect is the change of resistance denoted by δR/R0 which is proportional to the product of electron mobility and magnetic flux density i.e..

The anisotropic magnetoresistance (AMR) refers to the change in electrical resistance of a ferromagnetic material when its magnetization is rotated relative to ...

由 S Kokado 著作 · 2018 · 被引用 2 次 — The anisotropic magnetoresistance (AMR) effect is a fundamental phenomenon in which the electrical resistivity depends on the relative angle ...

Learn the basics of the magnetoresistive effect and how it is applied to contactless position measurement.